Research Summary

The group's general interests are in the area of semiconductor materials and devices. Currently, our efforts are focused on the following projects: (1)the growth and fabrication of GaAs, InP, and GaN-based III-V compound semiconductor three dimensional (3D) structures at the nanometer scale, and the realization of 3D semiconductor optoelectronic devices for potential applications in chemical and biological sensing; (2)the development of high efficiency GaAs-based THz photomixer and the on-chip integration with heterodyned tunable lasers and waveguide; (3)InP based high power lasers for applications as pump sources for fiber lasers; (4) III-V semiconductor nanowires/nanorods formation through engineered top-down approach and applications towards nanoinjection lasers.