NEWS

Our group is relocating to the University of Texas at Austin.

2021

Our first report on MacEtch of silicon carbide (SiC), with Julian as the lead author, is published in Advanced Functional Materials! 3D submicron features with nonporous 4H-SiC surfaces and near-vertical sidewalls are demonstrated, with potential applications in 3D devices for harsh environment power electronics, micro and nano electromechanical systems, and emerging quantum technology. This is yet another demonstration of the versatility of the MacEtch technology.

One of our patents on nanowire transistors is licensed by a major microelectronics company!

Prof. Li has been elected a Fellow of the National Academy of Inventors!

2020

Our paper titled "Enhancing Performance of GaAs Photodiodes via Monolithic Integration of Self‐Formed Graphene Quantum Dots and Antireflection Surface Texturing,"" published in Adv. Photon. Res. The approach reported opens a new way to monolithically integrate transparent contact onto textured 3D III-V semiconductor surfacecs.

Our first report on L-C network using the self-rolled-up membrane (S-RuM) mechanism is published in Advanced Functional Materials ! S-RuM enabled heterogeneous integration of inductors and capacitors in a monolithic way could bring passive electronic circuit miniaturization to a whole new level. There is practically no limit to the complexity or configuration of circuits with 3D components that can be made in this manner, all with one mask set. This work is featured by numerous news outlets including ScienceDaily, E&T, and TechXplore.
Prof. Li is named the Donald Biggar Willett Professor in Engineering!
Prof. Li is named Interim Director of the Nick Holonyak Jr. Micro & Nanotechnology Laboratory (MNTL)!
Our rolled-up power inductor paper entilted, "Monolithic mTesla Level Magnetic Induction by Self-Rolled-up Membrane Technology," is now published in Science Advances ! Congratulations to all the authors, including our collaborators from the POETS and DOE centers! In this work, we reported power inductors with unprecedented high density and large current handling capability by geometric transformation of centimeter long 2D nanomembranes into more than 21 turns 140 um diameter air-core microtubes, followed by post-rolling integration of ferrofluid magnetic materials. It represents another milestone in the scalability and device performance based on the S-RuM nanotechnology platform. This work has been featured by numerous news outlets including EurekAlert!, ScienceDaily, HPCwire, TechXplore, and LabManager.
van der Waals epitaxy leads to high quality TMDC growth: our paper, "Hybrid Integration of n-MoS2/p-GaN Diodes by Quasi-van der Waals Epitaxy," is accepted by ACS Appl. Electron. Mater.

2019

Congratulations to Wonsik for passing his PhD final exam!
Congratulations to Lukas for winning the ECE Indira Gunda Saladi Engineering Research Prize!
Prof. Li has been elected a Fellow of the Optical Society of America, for her pioneering contribution to nanostructured semiconductor materials growth and fabrication innovation for device applications!
Our paper, "Effect of Perforation on the Thermal and Electrical Breakdown of Self-Rolled-up Nanomembrane Structures" is published in Adv. Mater. Interfaces! Congrats to Julian and all co-authors!
Our paper, "CMOS Compatible Catalyst for MacEtch: Titanium Nitride Assisted Chemical Etching in Vapor Phase for High Aspect Ratio Silicon Nanostructures" is accepted by ACS Appl. Mater. Interfaces! Congrats to all authors, including our industry partner from Lam research! This work represents significant advancement of the MacEtch (metal-assisted chemical etch) technology with its CMOS-compatibility by using TiN catalyst and scalability by going to vapor phase!
Our paper, "High Aspect Ratio Ga2O3 Fin Arrays with Low-Interface Charge Density by Inverse Metal-Assisted Chemical Etching," is published in ACS Nano! Conglratulations to Hsien-Chih Jack, Munho, Kelson and all of the coauthors! This work has been featured by numerous news outlets including Phys.org, EurekAlert!, ScienceDaily, AZOMaterials, and I-Connect007.
Our paper, "Monolithic radio frequency SiNx self-rolled-up nanomembrane interdigital capacitor modeling and fabrication," is published in Nanotechnology! This is yet another demonstration of using S-RuM nanotechnology to miniaturize the footprint and enhance the performance of passive electronic components!
Two more patents on MacEtch (metal-assisted chemical etch) are issued: Catalyst-Assisted Chemical Etching with a Vapor-Phase Etchant (Patent number 15/712,498); and Optoelectronic device including a buried metal grating for extraordinary optical transmission (Patent number 15/200,345).
Two more patents on S-RuM nanotechnology are issued: Helical antenna and method of modulating the performance of a wireless communications device (Patent number: 15/408,893); and Rolled-up power inductor and array of rolled-up power inductors for on-chip applications (Patent number: 15/704,262).
Congratulations to Wonsik for passing his prelim exam!

2018

Prof. Li has been elected a Fellow of the American Physics Society, " for her seminal contributions to the fundamental understanding and technical innovations to epitaxial growth, fabrication, and applications of semiconductor nanowires and nanomembranes, towards making electronic and photonic devices smaller, faster, and cheaper."
Congratulations to Dr. Wen Huang for accepting a full professor position at Hefei University of Technology in China!
Congratulations to Dr. Munho Kim for accepting a faculty position at Nanyang Technology University in Singapore!
Our paper titled "Enhanced performance of Ge photodiodes via monolithic antireflection texturing and α-Ge self-passivation by inverse metal-assisted chemical etching," with Munho Kim as the lead author, has been published in ACS Nano! The periodically texutured surface and the simultaneous formation of amorphous Ge (α-Ge) directly from I-MacEtch lead to the increase of photocurrent and reduction of dark current for a metal-semiconductor-metal (MSM) photodiode, all with one processing step!
Our paper tilted "Three-dimensional radio frequency transformers based on a self-rolled-up membrane platform," with Wen Huang as the lead author, has been published in Nature Electronics! A News and Views article on this paper written by Dr. Macrelli appeared in the same issue. The rolled-up transformer SEM image has been selected as the "hero image" to highlight the May issue. In this work, we report high-performance ultra-compact on-chip RF transformers based on the monolithic 2D for 3D self-rolled-up membrane (S-RuM) platform. The much more desirable scaling behavior of the index of performance as a function of turns ratio than conventional planar designs is attributed to the almost ideal mutual magnetic coupling inherent to the S-RuM 3D architecture. This work has been featured by numerous news outlets including Eurekalert, eeNewsEurope, and Analog IC Tips.
Our paper titled "Self-Anchored Catalyst Interface Enables Ordered Via Array Formation from Sub-micron to millimeter Scale for Poly- and Single-Crystalline Silicon," with JD and Munho as the lead authors, is published in ACS Appl. Mater. Interfaces. This is yet another variation of MacEtch with Self-Anchored-Catalyst (SAC-MacEtch) that enables directional etching for otherwise challenging structures including large lateral and deep vertical dimensions, as well as polycrystals.
Wen and Prof. Li published a News and Views article, titled "Downscaling inductors with graphene", in the inaugural issue of Nature Electronics.
Professor Li will be serving as the Vice President of Finance and Administration for IEEE Photonics Society.

2017

Our paper on MacEtch (metal-assisted chemical etching) of the technically important InxGa1-xAs semiconductor, led by Lingyu, has been accepted by ACS Nano! This is the first successful demonstration of low bandgap and ternary semiconductor etching using MacEtch. Combined with digital etching, ordered In0.53Ga0.47As nanopillar arrays with perfectly damage-free and smooth sidewalls, as confirmed by the interface characterization using MOSCAPs, are realized.
Congratulations to Dr. Paul Froeter for completing his PhD degree and becoming the Engineering Teaching Lab Specialist right here in the department!
Congratulations to Wen Huang for completing his PhD degree and staying as a postdoc in the group to lead the S-RuM subgroup!
Congratulations to JD Kim and Eric Searbron for passing their PhD final exams and embarked on their new journeys at Intel and Northrop Grumman, respectively!
Another patent on MacEtch (metal-assisted chemical etch) is issued: "Apparatus and Method for Magnetic-Field Guided Metal-Assisted Chemical Etching," and assigned patent number 9,704,951.
Our paper titlted "Direct Electrical Probing of Periodic Modulation of Zinc-Dopant Distributions in Planar Gallium Arsenide Nanowires," has been accepted by ACS Nano! In this work, using nanoscale resolution microscopies including MIM and IR-SNOM, we provided unambiguous evidence that Zn dopants are preferentially accumulated at the twin-plane boundaries in planar GaAs p-n junction nanowires. Congrats, Wonsik, Eric, and all contributing authors!
Our paper titlted "Scaling the Aspect Ratio of Nanoscale Closely-Packed Silicon Vias by MacEtch: Kinetics of Carrier Generation and Mass Transport," has been accepted by Advanced Functional Materials! This work represents significant advancement in pushing the potentially disruptive MacEtch (metal-assisted chemical etching) technology towards yet another technically important frontier - small via arrays, while providing in-depth understanding of the underlying mechanism of this etching method. Congrats, JD and all!
Professor Li has been elevated to IEEE Fellow for contributions to semiconductor nanomaterials for electronic and photonic applications!

2016

Congratulations to Yi for passing his PhD final exam and accepting a position at IBM!
Congratulations to Kelson for completing his PhD thesis in record time while working at AFRL!
Kelson's paper, "Enhancement-Mode Ga2O3 Wrap-Gate Fin Field-Effect Transistors on Native (100) Ga2O3 Substrate with High Breakdown Voltage," has been accepted by Appl. Phys. Lett. and selected as the cover story! Congrats, Kelson!
Congratulations to JD for passing his prelim exam!
Our paper on high aspect ratio (50:1) InP FinFETs by MacEtch, with Yi Song as the lead author, has been published in IEEE Electron Device Letters and highlighted by several news outlets. This work demonstrates the application of MacEtch (metal-assisted chemical etching) to produce extremely smooth and high aspect ratio fin arrays for high performance transistors!
Congratulations to Prof. Li for making the campus list of Teachers Ranked as Excellent by their students!
Congratulations to Kyooho for completing his Ph.D. thesis and accepting a position at Samsung!
Prof. Li's Faculty Entrepreneurial Fellow project is featured in the ECE Magzine RESONANCE
Chen's review paper, "III-V Nanowire Transistors for Low-Power Logic Applications: a Review and Outlook," has been published in IEEE Transactions on Electron Devices!
Congratulations to Yi for winning the John Bardeen Memorial Gradudate Research Award!

2015

Our collaborative work on Enhancing Optical Transmission through MacEtch-Fabricated Buried Metal Gratings with Prof. Wasserman' and Prof. Podolskiy's groups, has been published in Advanced Materials. This work proves yet another application of MacEtch (metal-assisted chemical etching) -- enable electrical conduction and light transmission at the same time!
Congratulations to Siyu Liu (an undergrad researcher in the group mentored by Wen Huang) for winning the best overall poster award at the annual PURE workshop!
Two new PATENTS are awarded on 10/26/2015: US Patent Application 13/896,537 "Field Effect Transistor Structure Comprising a Stack of Vertically Separated Channel Nanowires," and US Patent Application 14/051,188 "Rolled-Up Inductor Structure for a Radiofrequency Integrated Circuit (RFIC)".
Congratulations to Kelson for passing his prelim exam!
Congratulations and best wishes to Parsian as he embarks on his career as a tensure-track Assistant Professor at Rochester Institue of Technology (RIT)!
Congratulations to Kyooho and Wen for passing their prelim exams!
Professor Li has been promoted to the rank of Professor!
Congratulations to Xiang for accepting a job offer at OmniVision!
Professor Li has been named to the first class of Engineering at Illinois' Faculty Entrpreneurial Fellows!
Professor Li has been named a Deputy Editor of Applied Physics Letters!
Congratulations and best wishes to this year's three new Ph.D. graduates - Dr. Chen Zhang, Dr. Kevin Bassett, and Dr. Karthik Balasundram, who have gone on to IBM, CU Aerospace, and Fenwick & West LLP, respectively!
Chen, Wonsik, and Parsian's paper on InAs planar nanowire gate-all-around MOSFETs by heterogenous selective lateral epitaxy (SLE) on GaAs substrates is accepted by IEEE Electron Device Letters. This work demonstrates the feasibility of InAs-based low power FETs and future heterogeneous device integration using SLE.
New patents awarded to the group this year:
Kelson et al.’s paper titled "RF Performance of Planar III-V Nanowire-Array Transistors Grown By Vapor-Liquid-Solid Epitaxy," has been accepted by IEEE Electron Device Letters.
Kevin and Parsian’s paper on the selective area epitaxy of GaAs nanowires is published in Applied Physics Letter.
Our paper, coauthored by Xin, Kelson, Chen, Parsian, and Dennis (AFRL), "High Speed Planar GaAs Nanowire Arrays with fmax > 75 GHz by Wafer-Scale Bottom-up Growth" is published in Nano Letters [pdf] (and has been selected as the Cover Art)! This work has also been featured by C&EN.
Our paper on rolled-up inductors authored by Fisher, Wen, Moyang, etc., titled "Ultra-Small, High-Frequency, and Substrate-Immune Microtube Inductors Transformed from 2D to 3D", has been accepted by Scientific Reports. This work provides the first experimental evidence for self-rolled-up membrane (S-RUM) nanotechnology as a new manufacturable platform for extreme miniaturization of passive electronic devices.
Congratulations to Chen Zhang on winning the Gregory Stillman Semiconductor Research Award!
Congratulations to Wen Huang on winning the John Bardeen Memorial Research Award!
Congratulations to Professor Li for winning the Willet Faculty Scholar award!

2014

High aspect ratio InP nanoFins can be fabricated by I-MacEtch! Our latest paper on MacEtch, coauthored by Ryan, Parsian, Yi et. al., "Inverse Metal-Assisted Chemical Etching of InP with Sub-20 nm Nanostructure Scalability" is published in Nano Letters.
Congratulations to Wonsik for passing the qual exam!
Congratulations to Chen for accepting a job offer at IBM!
Microtubes create cozy space for neurons to grow, and grow fast. Paul et al's paper, in collaboration with Professors Williams and Gillette groups, titled "Toward Intelligent Synthetic Neural Circuits: Directing and Accelerating Neuron Cell Growth by Self-Rolled-Up Silicon Nitride Microtube Array" has been published by ACS Nano [pdf]. This work has been featured by C&EN and other news outlets such as R&D, Phys.org, and Eurekalert.
Congratulations to Karthik and Chen for passing their prelim exams!
Our patent titled "Method of Fabricating a Planar Semiconductor Nanowire" has been issued and assigned patent number 8,810,009.
Prof. Li has been selected as one of the Distinguished Lecturers of the IEEE Nanotechnology Council.
Congratulations to Karthik for receiving the Joan & Lalit Bahl Fellowship!
Congratulations to Chen for receiving the Harriet & Robert Perry Fellowship!
Prof. Li has been elected to the Board of Governors of the IEEE Photonics Society.
Parsian et al.’s paper titled "Monolithic III-V Nanowire Solar Cells on Graphene via Direct van der Waals Epitaxy" has been published by Advanced Materials. This is the first report of a solar cell architecture based on dense arrays of coaxial p-n junction III-V NWs grown directly on graphene without any metal catalysts or lithographic patterning. See press articles such as Compoundsemiconductor and Materialstoday.
Congratulations to Xin for accepting a job offer at IBM!
Yi et al.’s work on the first III-V junctionless MOSFETs has been published by IEEE Electron Device Letters and featured by Semiconductor Today.
Chen’s paper on GaAs planar nanowire MOSFETs has been published in solid state electronics.

2013

''Photonic crystal membrane reflectors by magnetic field-guided metal-assisted chemical etching," by Karthik and Parsian et al., in collaboration with Prof. Weidong Zhou's group at University of Texas, Arlington, is accepted by Appl. Phys. Lett. This study establishes h-MacEtch (magnetic-field-guided metal-assisted chemical etching) for passive photonic devices with discrete nanoscale features, in place of conventional dry etching methods.
Congratulations to Xin for passing his prelim for Ph.D.!
Parsian and Prof. Li wrote an article on nanowire van der Waals epitaxy on 2D sheets for SPIE newsroom.
Our paper on ''3D hierarchical architectures based on self-rolled-up silicon nitride membranes'' by Paul Froeter et al. is accepted by Nanotechnology. This work establishes a platform technology using strained silicon nitride films processed in 2D for 3D functional architectures.
Our patent ''Method of Forming Nanoscale Three-Dimensional Patterns in a Porous Material'' with patent number 8,486,843 has been issued.
''GaAs Pillar Array-Based Light Emitting Diodes Fabricated by Metal-Assisted Chemical Etching,'' authored by Parsian, Ryan, Xiang, Karthik, JD, et al. is accepted by Journal of Applied Physics.
Congratulations to Paul for winning the Andrew T. Yang research award!
Parsian and Kyooho¡¯s collaborative work with Prof. Van Harlingen¡¯s group in Physics is featured at the Physics Illinois Bulletin. The paper entitled ''Anomalous Modulation of a Zero-Bias Peak in a Hybrid Nanowire-Superconductor Device'' is published in PRL.
Congratulations to Paul and Yi for passing their Ph.D. qualifying exams!
Congratulations to Chen for winning one of the best poster awards at the CNST workshop!
Xin and Chen's paper entitled "Monolithic Barrier-All-Around High Electron Mobility Transistor with Planar GaAs Nanowire Channel" has been accepted by Nano Letters!
Our work on van der Waals epitaxy of InGaAs nanowire growth on graphene has been highlighted by IEEE Spectrum, R&D magazine, phys.org, etc.
Congratulations to Ryan for officially becoming Dr. Dowdy and for accepting a job offer from Northrop Grumman!
Congratulations to Ryan Kim for receiving the John Bardeen Graduate Fellowship!
Chen Zhang's paper entitled ''A Distributive-Transconductance Model for Border Traps in III-V/High-k MOS Capacitors'' has been accepted by IEEE Electron Device Letters.
Parsian's paper titled ''In(x)Ga(1-x)As Nanowire Growth on Graphene: van der Waals Epitaxy Induced Phase Segregation'' has been accepted by Nano Letters.

2012

Congratulations to Karthik and Kyooho for passing their Ph.D. qualifying exams!
Our rolled-up inductor work has been covered by numerous press including Phys.org [pdf], nsf.gov, R&D magazine.
"On-Chip Inductors with Self-rolled-up SiNx Nanomembrane Tubes: a Novel Design Platform for Extreme Miniaturization," authored by Wen Huang, Xin Yu, Paul Froeter et al. has been published in Nano Letters.
"Heterogeneous Integration of InGaAs Nanowires on the Rear Surface of Si Solar Cells for Efficiency Enhancement," authored by Jae Cheol Shin, Parsian Mohseni et al. has been published in ACS Nano.
"Relationship between Planar GaAs Nanowire Growth Direction and Substrate Orientation," R. Dowdy, D. Walko, and X. Li, has been published in Nanotechnology.
Prof. Li delivered a talk on Semiconductor Nanoelectronic and Nanophotonic Devices, as a plenary speaker at the 2012 International Conference on Nano Science and Nanotechnology on Korea.
Jae and Chen's paper on "MacEtch using an all-inorganic high aspect ratio InAs nanowire mask for sub-100 nm Si nanowires and nanosheets" has been accepted by Nanotechnology.
Karthik et al.'s paper on MacEtch of degenerately doped Si has been accepted by Nanotechnology.
Jae et al.'s paper on the characteristics of InGaAs nanowire on Si has been published in Crystal Growth and Design.
Jae et al.'s paper on MacEtch produced Si micropillar array solar cell has been published in IEEE Journal of Photovoltaics.
Prof. Li's talk at the CNST workshop on "Array based III-V nanowire transistors" has been posted on YouTube.
Prof. Li has published a SPIE newsroom article entitled "MacEtch: anisotropic metal-assisted chemical etching defies the textbooks". 10 April 2012, SPIE Newsroom. DOI: 10.1117/2.1201203.004147
Ryan Kim has received the E. C. Jordan Award. These awards are given to seniors in the Department on the basis of excellence in scholarship and excellence of the individual effort in some area of Electrical and Computer Engineering.
Prof. Li has received the 2012 Dean's Award for Excellence in Research.
Ryan's paper on unidirectional GaAs nanowires on (110) substrates is to appear in EDL.
Prof. Li's invited review article on MacEtch has been published.
Prof. Li's invited review article on Rolled-up tube based photonics has been published.
Our GaAs MacEtch work has been covered by numerous press including LED professional, Compound Semi, Solar Novus Today, EE Times, Semiconductor Today, Sciencley.

2011

Congratulations to Ik Su Chun for officially becoming Dr. Chun!
Congratulations to Chen Zhang for passing his Ph.D. qualifying exam!
Congratulations to Xin Miao for winning the IEEE Electron Device Society student chapter Distinguished Student Speaker competition!
Matt's paper on the formation of high aspect ratio GaAs nanostructures using MacEtch has been published online in Nano Letters. This work establishes the applicability of MacEtch for high aspect ratio nanostructure formation beyond just Silicon. It opens up the possibilities of making III-V optoelectronic devices without using conventional dry etch.
Our all composition InGaAs nanowire on Si work has been reported by the UI News Bureau and featured by news outlets for its promise to make better solar cells, including Compound Semiconductor, National Science Foundation, Science News Online, R&D Magazine, Solar Novus Today, etc.
Jae's paper on 1D heterogeneous integration of InGaAs nanowires on Si substrate over almost the entire composition range has been published online in Nano Letters. This work establishes the possibility of making nanowire based multi-junction tandem solar cells without the lattice mismatch restriction in planar cells.
Kevin Bassett's paper, in collaboration with the Bruan group, on three-dimensional structuring of optoelectronic devices has been published on the cover of the September issue of Nature Materials.
Xin Miao's paper on GaAs planar nanowire array based HEMT has been published.
Paul Froeter has received the E. C. Jordan Award. These awards are given to seniors in the Department on the basis of excellence in scholarship and excellence of the individual effort in some area of Electrical and Computer Engineering.
Prof. Li has received the ONR 2011 Young Investigator Program Award.
Ik Su Chun, and Archana Challa's paper titled "Geometry dependence of strain driven self-rolling of semiconductor tubes", in collaboration with Prof. Jimmy Hsia's group in mechanical enigeering, is published in Nano Letters. [pdf]
Ik Su Chun, Kevin Basset, and Archana Challa's paper on the PL characteristics of rolled-up GaAs QW has been published in APL and selected by Virtual Journal of Nanoscale Science & Technology [pdf]
Ik Su Chun and Prof. Li have co-authored a paper in Nature with Prof. Rogers' group on multi-stack GaAs based PV cells [news release] [pdf].
Our work on metal-assisted chemical etching (MacEtch) for high aspect ratio silicon nanostructures has been published in Nano Letters (main author Winston Chern)[pdf]

2010

Congratulations to Archana Challa for accepting a position with Intel Corporation.
Our work on nanowires has been featured in the University of Illinois Annual Report. [pdf]
Professor Li has been appointed as a fellow of Center for Advanced Study. [link]
Ryan Dowdy receives Wilson Graduate Fellowship from Argonne National Laboratory! [link]
Our review paper written by Seth Fortuna and Prof. Li titled "Metal-catalyzed semiconductor nanowires: a review on the control of growth directions" has been published in Semiconductor Science and Technology Journal [pdf].
A cross-campus team including Prof. Li has received ARPA-E funding to develop novel waste heat capture system using large area arrays of 1D concentric silicon nanotubes (link to news article).
Congratulations to Seth Fortuna for passing his PhD qualifying exam.
Congratulations to Seth Fortuna, Ryan Dowdy, and Kevin Bassett for receiving their MS degrees.

2009

Prof. Xiuling Li has received the 2009 DARPA Young Faculty Award!
Our paper "GaAs MESFET With a High-Mobility Self-Assembled Planar Nanowire Channel" has been published in IEEE Electron Device Letters [pdf].
Congratulations to Kevin Bassett, Ik Su Chun, and Ryan Dowdy for passing their PhD qualifying examinations.
Our work on transistors made with planar GaAs nanowires has been featured on several technology news websites:
CompoundSemiconductor.net / AZom.com / e! Science News / Embedded Technology / Innovations Report / Nanotech Now / Nanowerk News / Photonics.com / PhysOrg.com / Product Design & Development / R&D Magazine / RedOrbit.com / Science Centric / Science Daily / Scientist Live / Semiconductor Online /
Our research on semiconductor nanotubes is headlined in the Univ. of Illinois ECE Department News.
Our paper (I.S. Chun and X. Li) on "Metal-Semiconductor Hybrid Micro- and Nanotubes" presented at the 2008 MRS Fall Meeting Symposium JJ has been identified as an Outstanding Symposium Paper.

2008

Seth Fortuna, Jianguo Wen (FS-MRL), Ik Su Chun and Prof. Li's work on Planar GaAs nanowires has been published in Nano Letters [pdf].
Seth Fortuna has been chosen as a finalist for the Best Student Paper Award at the 2008 IEEE LEOS Conference for the paper "MOCVD Grown III-V Nanowires: In-Plane, Self-Aligned and Transfer-Printable".
Our work on semiconductor nanotubes is featured in an article by Dean Adesida, "Compound Semiconductors: Illinois Contributions and Perspective" [pdf], published in the 2008 CS MANTECH Conference digest.
Prof. Li's review paper on strain induced semiconductor nanotubes has been published in Journal of Physics D: Applied Physics [pdf]
Ik Su Chun's work on large area assembly and dispersion of semiconductor nanotubes has been published in IEEE Transactions on Nanotechnology [pdf].
Ik Su Chun and Edmond Chow's (MNTL staff) work on 3D nanoscale patterned porous silicon has been published in Applied Physics Letters and selected by the Virtual Journal of Nanoscale Science and Technology [pdf].
Seth Fortuna's work on planar nanowires has been filed for a patent.
Ik Su Chun and Varun Verma's (Semiconductor Laser Lab) work on semiconductor nanotube formation has been published in Journal of Crystal Growth [pdf].
Prof. Li won the NSF CAREER award.