• Our first report on MacEtch of silicon carbide (SiC), with Julian as the lead author, is published in Advanced Functional Materials! 3D submicron features with nonporous 4H-SiC surfaces and near-vertical sidewalls are demonstrated, with potential applications in 3D devices for harsh environment power electronics, micro and nano electromechanical systems, and emerging quantum technology. This is yet another demonstration of the versatility of the MacEtch technology.
    • One of our patents on nanowire transistors is licensed by a major microelectronics company!
    • Prof. Li has been elected a Fellow of the National Academy of Inventors!