Refereed Journal Publications

  1. M. T. Dejarld, J. C. Shin, W. Chern, D. Chanda, K. Balasundaram, J. A. Rogers, and X. Li, "Formation of High Aspect Ratio GaAs Nanostructures with Metal Assisted Chemical Etching", Nano Letters Onlice (2011). [pdf]
  2. J. C. Shin, K. H. Kim, K. J. Yu, H. Hu, L. Yin, C. Ning, J. A. Rodgers, J. Zuo, and X. Li, "In(x)Ga(1-x)As Nanowires on Silicon: One-Dimensional Heterogeneous Epitaxy, Bandgap Engineering, and Photovoltaics", Nano Letters Online (2011). [pdf]
  3. E. C. Nelson, N. L. Dias, K. P. Bassett, S. N. Dunham, V. Verma, M. Miyake, P. Wiltzius, J. A. Rodgers, J. J. Coleman, X. Li, and P. V. Braun, "Epitaxial growth of three-dimensionally architectured optoelectronic devices", Nature Materials 10, 676-681 (2011). [pdf]
  4. X. Miao and X. Li, "Scalable Monolithically Grown AlGaAs-GaAs Planar Nanowire High-Electron-Mobility Transistor", IEEE Electron Device Letters 32, 1227-1229 (2011). [pdf]
  5. N. L. Dias, A. Garg, U. Reddy, J. D. Young, K. P. Bassett, X. Li, and J. J. Coleman, "Experimental verification of reduced intersubband scattering in ordered nanopore lattices", Applied Physics Letters, vol. 98. 071109 (2011). [pdf]
  6. V.B. Verma, U. Reddy, N.L. Dias, K.P. Bassett, X. Li, and J.J. Coleman, "Patterned quantum dot molecule laser fabricated by electron beam lithography and wet chemical etching", IEEE Journal of Quantum Electronics v46 n12, 1827-1833 (2010). [pdf]
  7. I.S. Chun, A. Challa, B. Derickson, K.J. Hsia, and X. Li, "Geometry Effect on the Strain-Induced Self-rolling of Semiconductor Membranes", Nano Lett. 10, 3927-3932 (2010). [pdf]
  8. S. Park, A. Le, J. Wu, Y. Huang, X. Li, and J.A. Rogers, "Light Emission Characteristics and Mechanics of Foldable Inorganic Light-Emitting Diodes", Advanced Mater. 22, 2062 (2010). [pdf]
  9. I.S. Chun, K.P. Bassett, A. Challa, and X. Li, "Tuning the photoluminescence characteristics with curvature for rolled-up GaAs quantum well microtubes", Appl. Phys. Lett. 96, 251106 (2010). [pdf]
  10. J. Yoon, S. Jo, I.S. Chun, I. Jung, H.S. Kim, M. Meitl, E. Menard, X. Li, J.J. Coleman, U. Paik, and J.A. Rogers, "GaAs photovoltaics and optoelectronics using releasable multilayer epitaxial assemblies", Nature 465, 329 (2010). [pdf]
  11. W. Chern, K. Hsu, I.S. Chun, B.P. de Azeredo, N. Ahmed, K.H. Kim, J. Zuo, N. Fang, P. Ferreira, and X. Li, "Nonlithographic Patterning and Metal-Assisted Chemical Etching for Manufacturing of Tunable Light-Emitting Silicon Nanowire Arrays", Nano Letters 10, 1582 (2010). [pdf]
  12. I.S.Chun, K.P. Bassett, A. Challa, X. Miao, M. Saarinen, and X.Li, "Strain-induced Self-rolling III-V Tubular nanostructure: Formation process and Photonic Application", Proc. of SPIE,7608, 760810, (2010) [pdf]
  13. S.A. Fortuna and X. Li, "Metal-catalyzed semiconductor nanowires: a review on the control of growth directions", Semicond. Sci. Technol. 25 (2010) 024005. [pdf]
  14. Zhuo Wang, Ik Su Chun, Xiuling Li, Zhun-Yong Ong, Eric Pop, Larry Millet, Martha Gillette,and Gabriel Popescu1, "Topography and refractometry of nanostructures using spatial light interference microscopy", Opt. Lett. 35 (2), 208 (2010). [pdf]
  15. Sang-Il Park, Yujie Xiong, Rak-Hwan Kim, Paulius Elvikis, Matthew Meitl, Dae-Hyeong Kim, Jian Wu, Jongseung Yoon, Chang-Jae Yu, Zhuangjian Liu, Yonggang Huang, Keh-chih Hwang, Placid Ferreira, Xiuling Li, Kent Choquette, and John A. Rogers, "Printed Assemblies of Inorganic Light-Emitting Diodes for Deformable and Semitransparent Displays", Science 325, 977-981 (2009). [pdf]
  16. S.A. Fortuna, and X. Li, "GaAs MESFET With a High-Mobility Self-Assembled Planar Nanowire Channel", IEEE Elec. Dev. Lett. 30 (6), 593-595 (2009). [pdf]
  17. S.A. Fortuna, J. Wen, I.S. Chun, and X. Li, "Planar GaAs Nanowires on GaAs (100) Substrates: Self-Aligned, Nearly Twin-Defect Free, and Transfer-Printable", Nano Letters 8 (12), 4421-4427 (2008). [pdf]
  18. X. Li, "Strain induced semiconductor nanotubes: from formation process to device applications", J. Phys. D: Appl. Phys. 41, 193001 (2008). [pdf]
  19. I.S. Chun, and X. Li, "Controlled Assembly and Dispersion of Strain-Induced InGaAs/GaAs Nanotubes," IEEE Trans. Nanotech. 7, 493-495 (2008). [pdf]
  20. I.S. Chun, E. Chow, and X. Li, "Nanoscale three dimensional pattern formation in light emitting porous silicon," Appl. Phys. Lett. 92, 191113 (2008). [pdf]
  21. I.S. Chun, V.B. Verma, V.C. Elarde, S.W. Kim, J.M. Zuo, J.J. Coleman, and X. Li, "InGaAs/GaAs 3D Architecture Formation by Strain Induced Self-Rolling with Lithographically Defined Rectangular Stripe Arrays," J. Cryst. Growth, 310, 2353-2358 (2008). [pdf]
  22. "Fabrication and Characterization of InGaP/GaAs Heterojunction Bipolar Transistors on Germanium on Insulator (GOI) Substrates," S. G. Thomas, E. S. Johnson, C. Tracy, P. Maniar, X. Li, B. Roof, Q. Hartmann and D. A. Ahmari, Electron Device Lett., 26, 438 , 2005.
  23. "In-plane Bandgap Control in Porous GaN through Electroless Wet Chemical Etching," X. Li, Y.-W. Kim, P. W. Bohn, and I. Adesida, Appl. Phys. Lett., 80 980-982 (2002).
  24. "In-plane Control of Morphology and Tunable Photoluminescence in Porous Silicon Produced by Metal-assisted Electroless Chemical Etching," S. Chattopadhyay, X. Li, P.W. Bohn, J. Appl. Phys, 91, 6134 (2002).
  25. "Catalytic Amplification of the Soft Lithographic Patterning of Si. Nonelectrochemical Orthogonal Fabrication of Photoluminescent Porous Si Pixel Arrays," Y. Harada, X. Li, P.W. Bohn, and R.G. Nuzzo, J. Am. Chem. Soc. 123, 8709-8717 (2001).
  26. "Experimental Factors Determining the Efficiency of Analyte Ion Generation in Laser Desorption/Ionization Mass Spectrometry on Porous Silicon," R.A. Kruse, X. Li, P.W. Bohn, and J.V. Sweedler, Analyt. Chem. 73, 3639-3645 (2001).
  27. "Temperature dependence of photoluminescence spectra from multiple Er3+ sites in Er-implanted undoped and Mg-doped GaN," Kim, S.; Rhee, S.J.; White, J.O.; Mitofsky, A.M.; Li, X.; Papen, G.C.; Coleman, J.J.; Bishop, S.G., Mater. Sci. Eng. B, 81, 136, (2001).
  28. "Effects of material growth technique and Mg doping on Er/sup 3+/ photoluminescence in Er-implanted GaN," Kim, S.; Henry, R.L.; Wickenden, A.E.; Koleske, D.D.; Rhee, S.J.; White, J.O.; Myoung, J.M.; Kim, K.; Li, X.; Coleman, J.J.; Bishop, S.G., J J. Appl. Phys., 90, 252 (2001).
  29. "Selective enhancement of 1540 nm Er3+ emission centers in Er- implanted GaN by Mg codoping", S. Kim, S.J. Rhee, X. Li, J.J. Coleman, and S.G. Bishop, Appl. Phys. Lett. 76, 2403 (2000).
  30. "Metal-assisted chemical etching in HF/H2O2 produces porous silicon", X. Li and P.W. Bohn, Appl. Phys. Lett.77, 2572 (2000).
  31. "Spatially resolved bandedge emission from partially coalesced GaN pyramids prepared by epitaxial lateral overgrowth", X. Li, P.W. Bohn, J. Kim, J. A. White and J. J. Coleman, Appl. Phys. Lett.76, 3031 (2000).
  32. "Arsenic oxide microcrystals in anodically processed GaAs: electrochemical growth, spectroscopy and morphology", X. Li and P.W. Bohn, J. Electrochem. Soc. 147, 1740 (2000).
  33. "Impurity states are the origin of yellow band origin in GaN produced by epitaxial lateral overgrowth", X. Li, P.W. Bohn and J. J. Coleman, Appl. Phys. Lett.75, 4049 (1999).
  34. "GaN lateral overgrowth and optical characterization", X. Li, S. G. Bishop, and J. J. Coleman, Appl. Phys. Lett.73, 1179 (1998).
  35. "Production and evolution of composition, morphology, and luminescence properties of microcrystalline arsenic oxide produced during anodic processing of (100) GaAs", C. M. Finnie, X. Li, and P. W. Bohn, , J. Appl. Phys. 86, 4997 (1999).
  36. "Annealing studies of photoluminescence spectra from multiple Er3+ centers in Er-implanted GaN", S. Kim, S.J. Rhee, X. Li, J.J. Coleman, and S.G. Bishop, J. Electron. Mater. 28, 266 (1999).
  37. "Photoluminescence and photoluminescence excitation spectroscopy of in situ Er-doped and Er-implanted GaN films grown by hydride vapor phase epitaxy", S. Kim, X. Li, J.J. Coleman, R. Zhang, D. M. Hansen, T.F. Kuech, and S.G. Bishop, MRS Internet J. Nitride Semicond. Res. 4S1, U956 (1999).
  38. "The incorporation of arsenic in GaN by metalorganic chemical vapor deposition", X. Li, S. Kim, E.E. Reuter, S.G. Bishop, and J.J. Coleman, Appl. Phys. Lett. 72, 1990 (1998).
  39. "Excitation mechanisms of multiple Er3+ sites in Er-implanted GaN", Kim, S.J. Rhee, X. Li, J.J. Coleman, S.G. Bishop, and P. B. Klein, J. Electron. Mater. 27, 246 (1998).
  40. "Trap-mediated, site-selective excitation of photoluminescence from multiple Er3+ sites in Er-implanted GaN", Kim, S.J. Rhee, X. Li, J.J. Coleman, and S.G. Bishop, Inst. Phys. Conf. Ser. 156, 203 (1998).
  41. "Photoluminescence and photoluminescence excitation spectroscopy of multiple Nd3+ sites in Nd-implanted GaN", Kim, S.J. Rhee, X. Li, J.J. Coleman, and S.G. Bishop, Phys. Rev. B 57, 14588 (1998).
  42. "Observation of multiple Er3+ sites in Er-implanted GaN by site-selective photoluminescence excitation spectroscopy", Kim, S. J. Rhee, D. A. Turnbull, E. E. Reuter, X. Li, J. J. Coleman, and S. G. Bishop, Appl. Phys. Lett. 71, 231 (1997).
  43. "Characteristics of GaN stripes grown by selective-area metalorganic chemical vapor deposition", X. Li, A. M. Jones, S. D. Roh, D. A. Turnbull, S. G. Bishop and J. J. Coleman, J. Electron. Mater. 26, 306 (1997).
  44. "Depth-resolved and excitation power dependent cathodoluminescence study of GaN films grown by metalorganic chemical vapor deposition", X. Li, J. J. Coleman, Appl. Phys. Lett. 70, 438 (1997).
  45. "Trap-mediated excitation of Er3+ photoluminescence in Er-implanted GaN", Kim, S. J. Rhee, D. A. Turnbull, X. Li, J. J. Coleman, and S. G. Bishop, P. B. Klein, Appl. Phys. Lett. 71, 2662 (1997). .
  46. "Site-selective photoluminescence excitation and photoluminescence spectroscopy of Er-implanted wurtzite GaN", S. Kim, S. J. Rhee, D. A. Turnbull, X. Li, J. J. Coleman, and S. G. Bishop, Mat. Res. Soc. Symp. Proc. 468, 131 (1997).
  47. "Surface photoabsorption monitoring of the growth of GaAs and InGaAs at 650 degrees C by MOCVD", Y. D. Kim, F. Nakamura, E. Yoon, D. V. Forbes, X. Li, and J. J. Coleman, J. Electron. Mater. 26, 1164 (1997).
  48. "Effect of e-beam irradiation on a p-n junction GaN light emitting diode", X. Li, S. Q. Gu, E. E. Reuter, J. T. Verdeyen, S. G. Bishop and J. J. Coleman, J. Appl. Phys. 80, 2687 (1996).
  49. "Time dependent study of low energy electron beam irradiation of Mg-doped GaN grown by metalorganic chemical vapor deposition", X. Li and J. J. Coleman, Appl. Phys. Lett. 69, 1605 (1996).
  50. "Luminescence studies of GaN grown on GaN and GaN/AlN buffer layers by metalorganic chemical vapor deposition", D. A. Turnbull, X. Li, S.Q. Gu, E.E. Reuter, J.J. Coleman and S.G. Bishop, J. Appl. Phys. 80, 5609 (1996).
  51. "Correlation of surface morphology and optical properties of GaN by conventional and selective-area MOCVD", X. Li, A.M. Jones, S.D. Roh, D.A. Turnbull, E.E. Reuter, S.Q. Gu, S.G. Bishop and J.J. Coleman, Mat. Res. Soc. Symp. Proc. 395, 943 (1996).
  52. "A new buffer layer for the growth of GaN by MOCVD", X. Li, D. V. Forbes, S. Q. Gu, D. A. Turnbull, S. G. Bishop and J. J. Coleman, J. Electron. Mater. 24, 1711 (1995).
  53. "Alkylation of Si surfaces using a 2-step halogenation Grinard Route", A. Bansal, X. Li, I. Lauermann, N. S. Lewis, S. Yi and W. H. Weinberg, J. Am. Chem. Soc. 118, 7225 (1996).
  54. "Photon-induced ejection of halogen atoms in alkali-halide nanocrystals", X. Li, R. D. Beck and R. L. Whetten Phys. Rev. Lett. 68, 3420 (1992).
  55. "Stability islands for doubly charged clusters below the kinetic critical size", X. Li and R. L. Whetten Chem. Phys. Lett., 196, 535 (1992).
  56. "Ultraviolet absorption bands of ionic compound clusters: onset of crystalline structures in [Csn+1In]+, n = 1 - 13", X. Li and R. L. Whetten J. Chem. Phys. 98, 6170 (1993).
  57. "Ultraviolet absorption bands of [Csn+1In]+ clusters ( n < 14 )", X. Li, R. L. Whetten, Z. Phys. D 26, 198-200 (1993).
  58. "Nonbulk convergence of solvent spectral shift in doped molecular clusters", X. Li, M. Y. Hahn, S. El-Shell and R. L. Whetten, J. Phys. Chem. 95, 8524 (1991).
  59. "Reactions of alkali-halide clusters", R. L. Whetten, M. L. Homer, X. Li, F. E. Livingston, P. St. John and R. D. Beck, Ber. Bunsenges. Physik. Chem. 96, 1120 (1992).
  60. "Complete statistical thermodynamics of the cluster phase transition", H. P. Cheng, X. Li and R. L. Whetten, Phys. Rev. A 46, 791 (1992).
  61. "Spectroscopic signatures of structural aufbau in (benzene)n; n=7-19", D. C. Easter, X. Li and R. L. Whetten, J. Chem. Phys. 95, 6362 (1991).

Book Chapters

  1. "Strain-induced Self Rolled-up Semiconductor Microtube Resonators: A New Architecture for Photonic Device Applications" X. Miao, I. S. Chun, and X. Li, in "Three-Dimensional Nanoarchitectures: Designing Next-Generation Devices", edited by Weilie Zhou and Zhong Lin Wang, Springer, 2011.
  2. "Spatially resolved optical characterization of GaN structures produced by selective area epitaxial lateral overgrowth" X. Li, P.W. Bohn, Y. W. Kim, and J. J. Coleman, in "III-Nitride semiconductors: Growth" Optoelectronic Properties of Semiconductors and Superlattices; v. 19, edited by M.O. Manasreh and I.T. Ferguson. New York: Taylor & Francis, 2003.