Refereed Journal Publications

  1. L. Kong, Y. Zhao, B. Dasgupta, Y. Ren, K. Hippalgaonkar, X. Li, W. K. Chim, and S. Y. Chiam, "Minimizing Isolate Catalyst Motion in Metal-Assisted Chemical Etching for Deep Trenching of Silicon Nanohole Array," ACS Appl. Mater. Interfaces, published online.
  2. H. Fu, K. Nan, P. Froeter, W. Huang, Y. Liu, Y. Wang, J. Wang, Z. Yan, H. Luan, X. Guo, Y. Zhang, C. Jiang, L. Li, A.C. Dunn, X. Li, Y. Huang, Y. Zhang, and J.A. Rogers, "Mechanically-Guided Deterministic Assembly of 3D Mesostructures Assisted by Residual Stresses," Small, 1700151 (2017)[pdf]
  3. Y. Zhang, F. Zhang, Z. Yan, Q. Ma, X. Li, Y. Huang, and J.A. Rogers, "Printing, Folding and Assembly Methods for 3D Mesostructures in Advanced Materials," Nature Review Materials 2, 1709 (2017).[pdf]
  4. W. Choi, E. Seabron, P. K. Mohseni, J. D. Kim, T. Gokus, A. Cernescu, P. Pochet, H. T. Johnson, W. L. Wilson, and X. Li, "Direct Electrical Probing of Periodic Modulation of Zinc-Dopant Distributions in Planar Gallium Arsenide Nanowires," ACS Nano, 11 (2), 1530-1539 (2017).[pdf]
  5. J. D. Kim, P. K. Mohseni, K. Balasundaram, S. Ranganathan, J. Pachamuthu, J. J. Coleman, and X. Li, "Scaling the Aspect Ratio of Nanoscale Closely-Packed Silicon Vias by MacEtch: Kinetics of Carrier Generation and Mass Transport," Adv. Func. Mater. 27, 1605614 (2017).[pdf]
  6. K. D. Chabak, N. Moser, A. J. Green, D. E. Walker Jr., S. E. Tetlak, E. Heller, A. Crespo, R. Fitch, J. McCandless, K. Leedy, M. Baldini, G. Wagner, Z. Galazka, X. Li, G. Jessen, "Enhancement-Mode Ga2O3 Wrap-Gate Fin Field-Effect Transistors on Native (100) beta-Ga2O3 Substrate with High Breakdown Voltage," Appl. Phys. Lett. 109, 213501 (2016).[pdf] Selected as the cover image of November 2016 issue.
  7. L. Kong, B. Dasgupta, Y. Ren, P. K. Mohseni, M. Hong, X. Li, W. K. Chim, and S. Y. Chiam, "Evidences for redox reaction driven charge transfer and mass transport in metal-assisted chemical etching of silicon," Sci. Rep. 6, 36582 (2016).[pdf]
  8. J. Qu, W. Choi, P. K. Mohseni, X. Li, Y. Zhang, H. Chen, S. Ringer, and R. Zheng, "Direct Observation of Dopants Distribution and Diffusion in GaAs Planar Nanowires with Atom Probe Tomography," Appl. Mater. Interfaces 8 (39), 26244-26250 (2016).[pdf]
  9. X. Yu, L. L. Goddard, X. Li and X. Chen, "Enhanced axial confinement in a monolithically integrated self-rolled-up SiNx vertical microring photonic coupler,"" Appl. Phys. Lett. 109, 111104 (2016).[pdf]
  10. Y. Song, P. K. Mohseni, S. H. Kim, J. C. Shin, T. Ishihara, I. Adesida, and X. Li, "Ultra-High Aspect Ratio InP Junctionless FinFETs by a Novel Wet Etching Method," IEEE Electron Dev. Lett. 37 (8), pp 970-973 (2016).[pdf]
  11. C. Zhang and X. Li, "III-V Nanowire Transistors for Low-Power Logic Applications: a Review and Outlook," IEEE Transactions on Electron Devices, 63(1), 223 (2016).[pdf]
  12. R. Liu, X. Zhao, C. Roberts, L. Yu, P. Mohseni, X. Li, V. Podolskiy, and D. Wasserman, "Enhanced Optical Transmission Through MacEtch-Fabricated Buried Metal Gratings," Adv. Mater. 28, 1441-1448 (2016).[pdf]
  13. X. Yu, E. Arbabi, L. L. Goddard, X. Li and X. Chen, "Monolithically integrated self-rolled-up microtube-based vertical coupler for 3D photonic integration,"" Appl. Phys. Lett. 107, 031102 (2015).[pdf]
  14. C. Zhang, W. Choi, P. Mohseni, and X. Li, "InAs Planar Nanowire Gate-All-Around MOSFETs on GaAs Substrates by Selective Lateral Epitaxy," IEEE Electron Dev. Lett., 36(7), 663-665 (2015).[pdf]
  15. J. Sadhu, H. Tian, J. Ma, B. Azeredo, J. Kim, K. Balasundaram, C. Zhang, X. Li, P. Ferreira, and S. Sinha, "Quenched Phonon Drag in Silicon Nanowires Reveals Significant Effect in the Bulk at Room Temperature," Nano Lett. 15 (5), pp 3159-3165 (2015).[pdf]
  16. K. D. Chabak, X. Miao, C. Zhang, D. E. Walker Jr., P. K. Mohseni, and X. Li, "RF Performance of Planar III-V Nanowire-Array Transistors Grown by Vapor-Liquid-Solid Epitaxy," IEEE Electron Device Lett. 36(5), 445-447 (2015).[pdf]
  17. K. P. Bassett, P.K. Mohseni, and X. Li, "Evolution of GaAs nanowire geometry in selective area epitaxy," Appl. Phys. Lett. 106, 133102 (2015).[pdf]
  18. X. Yu, W. Huang, M. Li, T. M. Comberiate, S. Gong, J. E. Schutt-Aine, and X. Li, "Ultra-Small, High-Frequency, and Substrate-Immune Microtube Inductors Transformed from 2D to 3D," Scientific Reports 5, Article number: 9661 doi:10.1038/srep09661.[pdf]
  19. K.-J. Chen, C.-C. Lin, H.-V. Han, C.-Y. Lee, S.-H. Chien, K.-Y. Wang, S.-H. Chiu, Z.-Y. Tu, J.-R. Li, T.-M. Chen, X. Li, M.-H. Shih, and H.-C. Kuo, "Wide-Range Correlated Color Temperature Light Generation from Resonant Cavity Hybrid Quantum Dot Light Emitting Diodes," J. Selected Topics in Quantum Electronics, 21(4), 1900407 (2015).[pdf]
  20. X. Miao, R. Bao, U. Kwon, K. Wong, W. Rausch, J. Bruley, P. DeHaven, W. Weng, R. Wachnik, R. Divakaruni, S. Grunow, M. Chudzik, V. Narayanan, X. Li, and S. Krishnan, "An Analytical Metal Resistance Model and Its Application for Sub-22nm Metal Gate CMOS," IEEE Electron Device Lett.36(4), 384-386 (2015).[pdf]
  21. K.-J. Chen, Y.-C. Lai, B.-C. Lin, C.-C. Lin, S.-H. Chiu, Z.-Y. Tu, M.-H. Shih, P. Yu, P.-T. Lee, X. Li, H.-F. Meng, G.-C. Chi, T.-M. Chen, and H.-C. Kuo, "Efficient Hybrid White Light-emitting Diodes by Organic-Inorganic materials at different CCT from 3000K to 9000K," Optics Express, 23 (7), A204-A210 (2015).[pdf]
  22. S. Xu, Z. Yan, K. Jang, W. Huang, H. Fu, J. Kim, Z. Wei, M. Flavin, J. McCracken, R. Wang, A. Badea, H. Liu, D. Xiao, G. Zhou, J. Lee, H. U. Chung, H. Cheng, W. Ren, A. Banks, X. Li, U. Paik, R. G. Nuzzo, Y. Huang, Y. Zhang and J. A. Rogers, "Assembly of micro/nanomaterials into complex, three-dimensional architectures by compressive buckling,'' Science, 347 (6218), 154-159 (2015). [pdf]
  23. H.-Y. Lin, K.-J. Chen, S.-W. Wang, C.-C. Lin, K.-Y. Wang, J.-R. Li, P.-T. Lee, M.-H. Shih, X. Li, H.-M. Chen, and H.-C. Kuo, "Improvement of light quality by DBR structure in white LED," Optics Express, 23 (3), A24 (2015). [pdf]
  24. S. H. Kim, P. K. Mohseni, Y. Song, T. Ishihara, and X. Li, "Inverse Metal-Assisted Chemical Etching of InP Produces Smooth High Aspect Ratio Nanostructures," Nano Lett. 15 (1), pp 641-648 (2015). [pdf]
  25. X. Miao, K. D. Chabak, C. Zhang, P. K. Mohseni, D. E. Walker Jr., and X. Li, "High Speed Planar GaAs Nanowire Arrays with fmax > 75 GHz by Wafer-Scale Bottom-up Growth," Nano Letters, 15 (5), pp 2780-2786 (2015). [pdf] Selected as the cover image of May 2015 issue.
  26. Y. Song and X. Li, "Scaling Junctionless Multigate MOSFETs by Step-doping in Channels," Appl. Phys. Lett. 105 (22), 223506 (2014). [pdf]
  27. C. Zhang, X. Miao, P. K. Mohseni, W. Choi, and X. Li, "Site-Controlled Planar GaAs Nanowire Growth: Yield and Mechanism", Nano Letters, 14 (12), 6836 (2014). [pdf]
  28. P. Froeter, Y. Huang, O. V. Cangellaris, M. U. Gillette, J. C. Williams and X. Li, "Toward Intelligent Synthetic Neural Circuits: Directing and Accelerating Neuron Cell Growth by Self-Rolled-Up Silicon Nitride Microtube Array," ACS Nano, 8 (11), 11108 (2014). [pdf]
  29. K. Jung, P. K. Mohseni, and X. Li, "Ultrathin InAs Nanowire Growth by Spontaneous Au Nanoparticle Spreading on Indium-Rich Surfaces", Nanoscale, 6, 15293 (2014). [pdf]
  30. W. Huang, S. Koric, K. J. Hsia, X. Yu, and X. Li, "Precision structural engineering of self-rolled-up 3D nanomembranes guided by transient quasi-static FEM modeling", Nano Letters, 14 (11), 6293 (2014). [pdf]
  31. H. Ning, N. A. Krueger, X. Sheng, H. Keum, C. Zhang, K. D. Choquette, X. Li, S. Kim, J. A. Rogers, and P. V. Braun, "Transfer printing of tunable porous silicon microcavities with embedded emitters", ACS Photonics, 1 (11), 1144 (2014). [pdf]
  32. X. Sheng, M. H. Yun, C. Zhang, A. M. Al-Okaily, M. Masouraki, L. Shen , S. Wang, W. L. Wilson, J. Y. Kim , P. Ferreira, X. Li, E. Yablonovitch, and J. A. Rogers, "Device Architectures for Enhanced Photon Recycling in Thin-Film Multijunction Solar Cells", Adv. Energy Mater. 1400919 (2014). [pdf]
  33. A. Razavieh, P. K. Mohseni, K. Jung, S. Mehrotra, S. Das, S. Suslov, X. Li, G. Klimeck, D. B. Janes, and J. Appenzeller, "Effect of Diameter Variation on Electrical Characteristics of Schottky Barrier Indium Arsenide Nanowire Field-Effect Transistors", ACS Nano 8(6), 6281-6287 (2014). [pdf]
  34. P. K. Mohseni, A. Behnam, J. D. Wood, X. Zhao, K. J. Yu, J. A. Rogers, J. W. Lyding, E. Pop, and X. Li, "Monolithic III-V Nanowire Solar Cells on Graphene via Direct van der Waals Epitaxy", Advanced Materials 26, 3755-3760 (2014). [pdf]
  35. Y. Song, C. Zhang, R. Dowdy, K. Chabak, P. K. Mohseni, W. Choi, and X. Li, ''III-V Junctionless Gate-All-Around Nanowire MOSFETs for High Linearity Low Power Applications'', IEEE Electron Dev. Lett. 35(3), 324-326, (2014). [pdf]
  36. C. Zhang and X. Li, ''Planar GaAs Nanowire Tri-Gate MOSFETs by Vapor-Liquid-Solid Growth Solid State Electronics'', Solid State Electronics 93, 40 (2014). [pdf]
  37. H. Huan, P. K. Mohseni, L. Pan, X. Li, S. Somnath, J. Felts, M. A. Shannon, and W. P. King, ''Fabrication of Arbitrarily-Shaped Silicon and Silicon Oxide Nanostructures Using Tip-based Nanofabrication'', J. Vac. Sci. Tech. B 31(6), 06FJ01 (2013). [pdf]
  38. K. Balasundaram, P. K. Mohseni, Y-C Shuai, D. Zhao, W. Zhou, and X. Li, ''Photonic crystal membrane reflectors by magnetic field-guided metal-assisted chemical etching'', Appl. Phys. Lett. 103, 214103 (2013). [pdf]
  39. P. Froeter, X. Yu, W. Huang, F. Du, M. Li, I. S. Chun, S. H. Kim, J. Hsia, J. A. Rogers, and X. Li, ''3D hierarchical architectures based on self-rolled-up silicon nitride membranes'', Nanotechnology 24, 475301 (2013). [pdf]
  40. L. Tang, I. Chun, Z. Wang, J. Li, X. Li, and Y. Lu, ''DNA Detection using plasmonic enhanced near-infrared photoluminescence of gallium arsenide'', Analytical Chemistry 85, 9522-7 (2013). [pdf]
  41. R. Dowdy, C. Zhang, P. K. Mohseni, S. A. Fortuna, J-G Wen, J. J. Coleman, and X. Li, ''Perturbation of Au-assisted Planar GaAs Nanowire Growth by p-Type Dopant Impurities'', Optical Materials Express Vol. 3, Issue 10, pp. 1687-1697 (2013). [pdf]
  42. P. K. Mohseni, S. H. Kim, X. Zhao, K. Balasundaram, J. D. Kim, L. Pan, J. A. Rogers, J. J. Coleman, and X. Li, ''GaAs pillar array-based light emitting diode fabricated by metal-assisted chemical etching'', J. Appl. Phys. 114, 064909 (2013). [pdf]
  43. J. C. Shin, A. Lee, P. K. Mohseni, D. Y. Kim, L. Yu, J. H. Kim, H. J. Kim, W. J. Choi, D. Wasserman, K. J. Choi, and X. Li, ''Wafer-Scale Production of Uniform InAsP Nanowire Array on Silicon for Heterogeneous Integration'', ACS Nano 7, 5463-5471 (2013). [pdf]
  44. D. Kang, S. Arab, S. B. Cronin, X. Li, J. A. Rogers, and J. Yoon, ''Carbon-doped GaAs single junction solar microcells grown in multilayer epitaxial assemblies'', Appl. Phys. Lett. 102, 253902 (2013). [pdf]
  45. X. Miao, C. Zhang, and X. Li, "Monolithic Barrier-All-Around High Electron Mobility Transistor with Planar GaAs Nanowire Channel", Nano Letters 13 (6), 2548, (2013).[pdf]
  46. B. Azeredo, J. Sadhu, J. Ma, K. Jacobs, J. Kim, K. Lee and J. Eraker, X. Li, S. Sinha, N. Fang, P. Ferreira and K. Hsu, "Silicon nanowires with controlled sidewall profile and roughness fabricated by thin-film dewetting and metal-assisted chemical etching", Nanotechnology 24, 225305 (2013).[pdf]
  47. C. Zhang, M. Xu, P. D. Ye, and X. Li, "A Distributive-Transconductance Model for Border Traps in III-V/High-k MOS Capacitors", IEEE Electron. Dev. Letts. 34, 735 (2013). [pdf]
  48. X. Sheng, L. Shen, T. Kim, L. Li, X. Wang, R. Dowdy, P. Froeter, K. Shigeta, X. Li, R. G. Nuzzo, N. C. Giebink, and J. A. Rogers, "Doubling the Power Output of Bifacial Thin-Film GaAs Solar Cells by Embedding Them in Luminescent Waveguides", Adv. Energy Mater 3(8), 991-996 (2013).[pdf]
  49. A. D. K. Finck, D. J. Van Harlingen, P. K. Mohseni, K. Jung, and X. Li, "Anomalous modulation of a zero bias peak in a hybrid nanowire-superconductor device", Phys. Rev. Lett. 110, 126406 (2013).[pdf]
  50. P. K. Mohseni, A. Behnam, J. D. Wood, C. Engllish, J. W. Lyding, E. Pop and X. Li, "In(x)Ga(1-x)As Nanowire Growth on Graphene: van der Waals Epitaxy Induced Phase Segregation", Nano Letters 13, 1153-1161 (2013).[pdf]
  51. R. S. Dowdy, D. A. Walko, and X. Li, "Relationship between plannar GaAs nanowire growth direction and substrate orientation" Nanotechnology 24, 035304 (2013).[pdf]
  52. W. Huang, X. Yu, P. Froeter, R. Xu, P. Ferreira, and X. Li, "On-Chip Inductors with Self-Rolled-Up SiNx Nanomembrane Tubes: A Novel Design Platform for Extreme Miniaturization", Nano Letters 12, 6283-6288(2012).[pdf]
  53. R.-H. Kim, S. Kim, Y. M. Song, H. Jeong, T.-I. Kim, J. Lee, X. Li, K. D. Choquette and J. A. Rogers, "Flexible Vertical Light Emitting Diodes", Small 8(20), 3123-3128 (2012).[pdf]
  54. J. C. Shin, P. K. Mohseni, K. J. Yu, S. Tomasulo, K. H. Montgomery, M. L. Lee, J. A. Rogers, and X. Li, "Heterogeneous Integration of InGaAs Nanowires on the Rear Surface of Si Solar Cells for Efficiency Enhancement" ACS Nano, 6, 11074-11079(2012).[pdf]
  55. Y. Song, J, Luo, and X. Li, "Vertically stacked individually tunable nanowire field effect transistors for low power operation with ultrahigh radio frequency linearity" Applied Physics Letters, 101, 093509 (2012).[pdf]
  56. J. C. Shin, C. Zhang, and X. Li, "Sub-100 nm Si nanowire and nano-sheet array formation by MacEtch using a non-lithographic InAs Nanowire Mask" Nanotechnology, 23, 305305 (2012).[pdf]
  57. K. Balasundaram, J. S. Sadhu, J. C. Shin, B. Azeredo, D. Chanda, M. Malik, K. Hsu, J. A. Rogers, P. Ferreira, S. Sinha, and X. Li, "Porosity control in metal assisted chemical etching of degenerately doped silicon" Nanotechnology, 23, 305304 (2012).[pdf]
  58. J. C. Shin, K. J. Choi, D. Y. Kim, W. J. Choi, and X. Li, "Characteristics of Strain-Induced InxGa1-xAs Nanowires Grown on Si(111) Substrates,:" Crystal Growth and Design, 12, 2994 (2012).[pdf]
  59. B. Nikoobakht and X. Li, "Two-Dimensional Nanomembranes: Can They Outperform Lower Dimensional Nanocrystals?" ACS Nano, 6, 1883 (2012).[pdf]
  60. R. Dowdy, D. Walko, S. A. Fortuna, and X. Li, "Realization of Unidirectional Planar GaAs Nanowires on (110) Substrates", IEEE Electron Device Letters, 33, 522 (2012).[pdf]
  61. J.C. Shin, D. Chanda, W. Chern, K.J. Yu, J.A. Rogers, and X. Li, "Experimental Study of Design Parameters in Periodic Silicon Micropillar Array Solar Cells Produced by Soft Lithography and Metal Assisted Chemical Etching", IEEE J. Photovoltaics, 2, 129 (2012).[pdf]
  62. X. Li, "Metal Assisted Chemical Etching for High Aspect Ratio Nanostructures: A Review of Characteristics and Applications in Photovoltaics", Current Opinion in Solid State & Materials Science, invited review article, 16, 71 (2012).[pdf]
  63. X. Li, "Strain Induced Self-rolled-up Ring Resonators: a review of geometrical and resonant properties", Advances in Optics and Photonics, invited article, 3 (4), 366-387 (2011). [pdf]
  64. M. T. Dejarld, J. C. Shin, W. Chern, D. Chanda, K. Balasundaram, J. A. Rogers, and X. Li, "Formation of High Aspect Ratio GaAs Nanostructures with Metal Assisted Chemical Etching", Nano Letters 11, 5259-5263 (2011). [pdf]
  65. J. C. Shin, K. H. Kim, K. J. Yu, H. Hu, L. Yin, C. Ning, J. A. Rodgers, J. Zuo, and X. Li, "In(x)Ga(1-x)As Nanowires on Silicon: One-Dimensional Heterogeneous Epitaxy, Bandgap Engineering, and Photovoltaics", Nano Letters 11, 4831-4838 (2011). [pdf]
  66. E. C. Nelson, N. L. Dias, K. P. Bassett, S. N. Dunham, V. Verma, M. Miyake, P. Wiltzius, J. A. Rodgers, J. J. Coleman, X. Li, and P. V. Braun, "Epitaxial growth of three-dimensionally architectured optoelectronic devices", Nature Materials 10, 676-681 (2011). [pdf]
  67. X. Miao and X. Li, "Scalable Monolithically Grown AlGaAs-GaAs Planar Nanowire High-Electron-Mobility Transistor", IEEE Electron Device Letters 32, 1227-1229 (2011). [pdf]
  68. N. L. Dias, A. Garg, U. Reddy, J. D. Young, K. P. Bassett, X. Li, and J. J. Coleman, "Experimental verification of reduced intersubband scattering in ordered nanopore lattices", Applied Physics Letters, vol. 98. 071109 (2011). [pdf]
  69. V.B. Verma, U. Reddy, N.L. Dias, K.P. Bassett, X. Li, and J.J. Coleman, "Patterned quantum dot molecule laser fabricated by electron beam lithography and wet chemical etching", IEEE Journal of Quantum Electronics v46 n12, 1827-1833 (2010). [pdf]
  70. I.S. Chun, A. Challa, B. Derickson, K.J. Hsia, and X. Li, "Geometry Effect on the Strain-Induced Self-rolling of Semiconductor Membranes", Nano Lett. 10, 3927-3932 (2010). [pdf]
  71. S. Park, A. Le, J. Wu, Y. Huang, X. Li, and J.A. Rogers, "Light Emission Characteristics and Mechanics of Foldable Inorganic Light-Emitting Diodes", Advanced Mater. 22, 2062 (2010). [pdf]
  72. I.S. Chun, K.P. Bassett, A. Challa, and X. Li, "Tuning the photoluminescence characteristics with curvature for rolled-up GaAs quantum well microtubes", Appl. Phys. Lett. 96, 251106 (2010). [pdf]
  73. J. Yoon, S. Jo, I.S. Chun, I. Jung, H.S. Kim, M. Meitl, E. Menard, X. Li, J.J. Coleman, U. Paik, and J.A. Rogers, "GaAs photovoltaics and optoelectronics using releasable multilayer epitaxial assemblies", Nature 465, 329 (2010). [pdf]
  74. W. Chern, K. Hsu, I.S. Chun, B.P. de Azeredo, N. Ahmed, K.H. Kim, J. Zuo, N. Fang, P. Ferreira, and X. Li, "Nonlithographic Patterning and Metal-Assisted Chemical Etching for Manufacturing of Tunable Light-Emitting Silicon Nanowire Arrays", Nano Letters 10, 1582 (2010). [pdf]
  75. I.S.Chun, K.P. Bassett, A. Challa, X. Miao, M. Saarinen, and X.Li, "Strain-induced Self-rolling III-V Tubular nanostructure: Formation process and Photonic Application", Proc. of SPIE,7608, 760810, (2010) [pdf]
  76. S.A. Fortuna and X. Li, "Metal-catalyzed semiconductor nanowires: a review on the control of growth directions", Semicond. Sci. Technol. 25 (2010) 024005. [pdf]
  77. Zhuo Wang, Ik Su Chun, Xiuling Li, Zhun-Yong Ong, Eric Pop, Larry Millet, Martha Gillette,and Gabriel Popescu1, "Topography and refractometry of nanostructures using spatial light interference microscopy", Opt. Lett. 35 (2), 208 (2010). [pdf]
  78. Sang-Il Park, Yujie Xiong, Rak-Hwan Kim, Paulius Elvikis, Matthew Meitl, Dae-Hyeong Kim, Jian Wu, Jongseung Yoon, Chang-Jae Yu, Zhuangjian Liu, Yonggang Huang, Keh-chih Hwang, Placid Ferreira, Xiuling Li, Kent Choquette, and John A. Rogers, "Printed Assemblies of Inorganic Light-Emitting Diodes for Deformable and Semitransparent Displays", Science 325, 977-981 (2009). [pdf]
  79. S.A. Fortuna, and X. Li, "GaAs MESFET With a High-Mobility Self-Assembled Planar Nanowire Channel", IEEE Elec. Dev. Lett. 30 (6), 593-595 (2009). [pdf]
  80. S.A. Fortuna, J. Wen, I.S. Chun, and X. Li, "Planar GaAs Nanowires on GaAs (100) Substrates: Self-Aligned, Nearly Twin-Defect Free, and Transfer-Printable", Nano Letters 8 (12), 4421-4427 (2008). [pdf]
  81. X. Li, "Strain induced semiconductor nanotubes: from formation process to device applications", J. Phys. D: Appl. Phys. 41, 193001 (2008). [pdf]
  82. I.S. Chun, and X. Li, "Controlled Assembly and Dispersion of Strain-Induced InGaAs/GaAs Nanotubes," IEEE Trans. Nanotech. 7, 493-495 (2008). [pdf]
  83. I.S. Chun, E. Chow, and X. Li, "Nanoscale three dimensional pattern formation in light emitting porous silicon," Appl. Phys. Lett. 92, 191113 (2008). [pdf]
  84. I.S. Chun, V.B. Verma, V.C. Elarde, S.W. Kim, J.M. Zuo, J.J. Coleman, and X. Li, "InGaAs/GaAs 3D Architecture Formation by Strain Induced Self-Rolling with Lithographically Defined Rectangular Stripe Arrays," J. Cryst. Growth, 310, 2353-2358 (2008). [pdf]
  85. "Fabrication and Characterization of InGaP/GaAs Heterojunction Bipolar Transistors on Germanium on Insulator (GOI) Substrates," S. G. Thomas, E. S. Johnson, C. Tracy, P. Maniar, X. Li, B. Roof, Q. Hartmann and D. A. Ahmari, Electron Device Lett., 26, 438 , 2005.
  86. "In-plane Bandgap Control in Porous GaN through Electroless Wet Chemical Etching," X. Li, Y.-W. Kim, P. W. Bohn, and I. Adesida, Appl. Phys. Lett., 80 980-982 (2002).
  87. "In-plane Control of Morphology and Tunable Photoluminescence in Porous Silicon Produced by Metal-assisted Electroless Chemical Etching," S. Chattopadhyay, X. Li, P.W. Bohn, J. Appl. Phys, 91, 6134 (2002).
  88. "Catalytic Amplification of the Soft Lithographic Patterning of Si. Nonelectrochemical Orthogonal Fabrication of Photoluminescent Porous Si Pixel Arrays," Y. Harada, X. Li, P.W. Bohn, and R.G. Nuzzo, J. Am. Chem. Soc. 123, 8709-8717 (2001).
  89. "Experimental Factors Determining the Efficiency of Analyte Ion Generation in Laser Desorption/Ionization Mass Spectrometry on Porous Silicon," R.A. Kruse, X. Li, P.W. Bohn, and J.V. Sweedler, Analyt. Chem. 73, 3639-3645 (2001).
  90. "Temperature dependence of photoluminescence spectra from multiple Er3+ sites in Er-implanted undoped and Mg-doped GaN," Kim, S.; Rhee, S.J.; White, J.O.; Mitofsky, A.M.; Li, X.; Papen, G.C.; Coleman, J.J.; Bishop, S.G., Mater. Sci. Eng. B, 81, 136, (2001).
  91. "Effects of material growth technique and Mg doping on Er/sup 3+/ photoluminescence in Er-implanted GaN," Kim, S.; Henry, R.L.; Wickenden, A.E.; Koleske, D.D.; Rhee, S.J.; White, J.O.; Myoung, J.M.; Kim, K.; Li, X.; Coleman, J.J.; Bishop, S.G., J J. Appl. Phys., 90, 252 (2001).
  92. "Selective enhancement of 1540 nm Er3+ emission centers in Er- implanted GaN by Mg codoping", S. Kim, S.J. Rhee, X. Li, J.J. Coleman, and S.G. Bishop, Appl. Phys. Lett. 76, 2403 (2000).
  93. "Metal-assisted chemical etching in HF/H2O2 produces porous silicon", X. Li and P.W. Bohn, Appl. Phys. Lett.77, 2572 (2000).[pdf]
  94. "Spatially resolved bandedge emission from partially coalesced GaN pyramids prepared by epitaxial lateral overgrowth", X. Li, P.W. Bohn, J. Kim, J. A. White and J. J. Coleman, Appl. Phys. Lett.76, 3031 (2000).
  95. "Arsenic oxide microcrystals in anodically processed GaAs: electrochemical growth, spectroscopy and morphology", X. Li and P.W. Bohn, J. Electrochem. Soc. 147, 1740 (2000).
  96. "Impurity states are the origin of yellow band origin in GaN produced by epitaxial lateral overgrowth", X. Li, P.W. Bohn and J. J. Coleman, Appl. Phys. Lett.75, 4049 (1999).
  97. "GaN lateral overgrowth and optical characterization", X. Li, S. G. Bishop, and J. J. Coleman, Appl. Phys. Lett.73, 1179 (1998).
  98. "Production and evolution of composition, morphology, and luminescence properties of microcrystalline arsenic oxide produced during anodic processing of (100) GaAs", C. M. Finnie, X. Li, and P. W. Bohn, , J. Appl. Phys. 86, 4997 (1999).
  99. "Annealing studies of photoluminescence spectra from multiple Er3+ centers in Er-implanted GaN", S. Kim, S.J. Rhee, X. Li, J.J. Coleman, and S.G. Bishop, J. Electron. Mater. 28, 266 (1999).
  100. "Photoluminescence and photoluminescence excitation spectroscopy of in situ Er-doped and Er-implanted GaN films grown by hydride vapor phase epitaxy", S. Kim, X. Li, J.J. Coleman, R. Zhang, D. M. Hansen, T.F. Kuech, and S.G. Bishop, MRS Internet J. Nitride Semicond. Res. 4S1, U956 (1999).
  101. "The incorporation of arsenic in GaN by metalorganic chemical vapor deposition", X. Li, S. Kim, E.E. Reuter, S.G. Bishop, and J.J. Coleman, Appl. Phys. Lett. 72, 1990 (1998).
  102. "Excitation mechanisms of multiple Er3+ sites in Er-implanted GaN", Kim, S.J. Rhee, X. Li, J.J. Coleman, S.G. Bishop, and P. B. Klein, J. Electron. Mater. 27, 246 (1998).
  103. "Trap-mediated, site-selective excitation of photoluminescence from multiple Er3+ sites in Er-implanted GaN", Kim, S.J. Rhee, X. Li, J.J. Coleman, and S.G. Bishop, Inst. Phys. Conf. Ser. 156, 203 (1998).
  104. "Photoluminescence and photoluminescence excitation spectroscopy of multiple Nd3+ sites in Nd-implanted GaN", Kim, S.J. Rhee, X. Li, J.J. Coleman, and S.G. Bishop, Phys. Rev. B 57, 14588 (1998).
  105. "Observation of multiple Er3+ sites in Er-implanted GaN by site-selective photoluminescence excitation spectroscopy", Kim, S. J. Rhee, D. A. Turnbull, E. E. Reuter, X. Li, J. J. Coleman, and S. G. Bishop, Appl. Phys. Lett. 71, 231 (1997).
  106. "Characteristics of GaN stripes grown by selective-area metalorganic chemical vapor deposition", X. Li, A. M. Jones, S. D. Roh, D. A. Turnbull, S. G. Bishop and J. J. Coleman, J. Electron. Mater. 26, 306 (1997).
  107. "Depth-resolved and excitation power dependent cathodoluminescence study of GaN films grown by metalorganic chemical vapor deposition", X. Li, J. J. Coleman, Appl. Phys. Lett. 70, 438 (1997).
  108. "Trap-mediated excitation of Er3+ photoluminescence in Er-implanted GaN", Kim, S. J. Rhee, D. A. Turnbull, X. Li, J. J. Coleman, and S. G. Bishop, P. B. Klein, Appl. Phys. Lett. 71, 2662 (1997). .
  109. "Site-selective photoluminescence excitation and photoluminescence spectroscopy of Er-implanted wurtzite GaN", S. Kim, S. J. Rhee, D. A. Turnbull, X. Li, J. J. Coleman, and S. G. Bishop, Mat. Res. Soc. Symp. Proc. 468, 131 (1997).
  110. "Surface photoabsorption monitoring of the growth of GaAs and InGaAs at 650 degrees C by MOCVD", Y. D. Kim, F. Nakamura, E. Yoon, D. V. Forbes, X. Li, and J. J. Coleman, J. Electron. Mater. 26, 1164 (1997).
  111. "Effect of e-beam irradiation on a p-n junction GaN light emitting diode", X. Li, S. Q. Gu, E. E. Reuter, J. T. Verdeyen, S. G. Bishop and J. J. Coleman, J. Appl. Phys. 80, 2687 (1996).
  112. "Time dependent study of low energy electron beam irradiation of Mg-doped GaN grown by metalorganic chemical vapor deposition", X. Li and J. J. Coleman, Appl. Phys. Lett. 69, 1605 (1996).
  113. "Luminescence studies of GaN grown on GaN and GaN/AlN buffer layers by metalorganic chemical vapor deposition", D. A. Turnbull, X. Li, S.Q. Gu, E.E. Reuter, J.J. Coleman and S.G. Bishop, J. Appl. Phys. 80, 5609 (1996).
  114. "Correlation of surface morphology and optical properties of GaN by conventional and selective-area MOCVD", X. Li, A.M. Jones, S.D. Roh, D.A. Turnbull, E.E. Reuter, S.Q. Gu, S.G. Bishop and J.J. Coleman, Mat. Res. Soc. Symp. Proc. 395, 943 (1996).
  115. "A new buffer layer for the growth of GaN by MOCVD", X. Li, D. V. Forbes, S. Q. Gu, D. A. Turnbull, S. G. Bishop and J. J. Coleman, J. Electron. Mater. 24, 1711 (1995).
  116. "Alkylation of Si surfaces using a 2-step halogenation Grinard Route", A. Bansal, X. Li, I. Lauermann, N. S. Lewis, S. Yi and W. H. Weinberg, J. Am. Chem. Soc. 118, 7225 (1996).
  117. "Photon-induced ejection of halogen atoms in alkali-halide nanocrystals", X. Li, R. D. Beck and R. L. Whetten Phys. Rev. Lett. 68, 3420 (1992).
  118. "Stability islands for doubly charged clusters below the kinetic critical size", X. Li and R. L. Whetten Chem. Phys. Lett., 196, 535 (1992).
  119. "Ultraviolet absorption bands of ionic compound clusters: onset of crystalline structures in [Csn+1In]+, n = 1 - 13", X. Li and R. L. Whetten J. Chem. Phys. 98, 6170 (1993).
  120. "Ultraviolet absorption bands of [Csn+1In]+ clusters ( n < 14 )", X. Li, R. L. Whetten, Z. Phys. D 26, 198-200 (1993).
  121. "Nonbulk convergence of solvent spectral shift in doped molecular clusters", X. Li, M. Y. Hahn, S. El-Shell and R. L. Whetten, J. Phys. Chem. 95, 8524 (1991).
  122. "Reactions of alkali-halide clusters", R. L. Whetten, M. L. Homer, X. Li, F. E. Livingston, P. St. John and R. D. Beck, Ber. Bunsenges. Physik. Chem. 96, 1120 (1992).
  123. "Complete statistical thermodynamics of the cluster phase transition", H. P. Cheng, X. Li and R. L. Whetten, Phys. Rev. A 46, 791 (1992).
  124. "Spectroscopic signatures of structural aufbau in (benzene)n; n=7-19", D. C. Easter, X. Li and R. L. Whetten, J. Chem. Phys. 95, 6362 (1991).

Book Chapters

  1. "Vapor-Liquid-Solid Growth of Semiconductor Nanowires," J. M. Redwing, X. Miao, and X. Li, in "Handbook of Crystal Growth," Vol. 3, edited by T. F. Kuech, Elsevier, 2014.
  2. "Strain-induced Self Rolled-up Semiconductor Microtube Resonators: A New Architecture for Photonic Device Applications" X. Miao, I. S. Chun, and X. Li, in "Three-Dimensional Nanoarchitectures: Designing Next-Generation Devices", edited by Weilie Zhou and Zhong Lin Wang, Springer, 2011.
  3. "Spatially resolved optical characterization of GaN structures produced by selective area epitaxial lateral overgrowth" X. Li, P.W. Bohn, Y. W. Kim, and J. J. Coleman, in "III-Nitride semiconductors: Growth" Optoelectronic Properties of Semiconductors and Superlattices; v. 19, edited by M.O. Manasreh and I.T. Ferguson. New York: Taylor & Francis, 2003.